datasheet using the terminology BFA9 – BFA0 to denote the 10 address bits required to Added AT45DBD-SU to ordering information and corresponding. Explore the latest datasheets, compare past datasheet revisions, and confirm part lifecycle. AT45DBD-SU Datasheet, 45DB 32M Flash Memory Datasheet, buy AT45DBD-SU.

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The Status Register can be read at any time, including during an internally self-timed program or erase operation. When the last bit in the main memory array has been read, the device will continue reading back at the beginning of the first page of memory. The Continuous Array Read bypasses both data buffers and leaves the contents of the buffers unchanged. The first 13 bits A21 – A9 of the bits sequence specify which page of the main memory array to read, and the last 9 bits A8 – AO of the bits address sequence specify the starting byte address within the page.

Dimensions D1 and E do not include mold protrusion. Once the CS pin has been asserted, an opcode of 32H and 3 dummy bytes ar45db321d-su be clocked in via the SI pin. Main Memory Page Read 2.

AT45DBD-SU Datasheet

If bit 7 is a 0, then the device is in a busy state. An under specified regulator can cause current starvation. To start a page read from the DataFlash standard page size bytesan opcode of D2H must be clocked into the device followed by three address bytes which comprise the bit page and byte address sequence and 4 don’t care bytes. Auto Page Rewrite Group C commands consist of: After the last bit of the opcode sequence has been clocked into the device, the data for the contents of the Sector Pro- tection Register must be clocked in.

Data is first clocked into buffer 1 or buffer 2 from the input pin SI and then programmed into a specified page in the main memory. Command, address, and input data present on the SI pin is always latched on the rising edge of SCK, while output data on the SO pin is always clocked out on the tailing edge ot bOK. Memory Array To provide optimal flexibility, the memory array of the AT45DBD is divided into three levels of granularity comprising of sectors, blocks, and pages.


After the last data byte has been clocked in, the CS pin must be deasserted to initiate the inter- nally self-timed program cycle. The address bytes are comprised of 1 don’t care bit, 13 page address bits, PA12 – PAO that select the page in the main memory where data is to be written, and 10 buffer address bits BFA9 – BFAO that select the first byte in the buffer to be written.

If the device P Since the erased state FFH of each byte in the Sector Protection Register is used to indicate that a sector is specified for protection, leaving the sector protection enabled during the erasing of the register allows the protection scheme to be more effective in the prevention of accidental programming or erasing of the device.

I’ll try the PIC32 this evening and see if roughly the same code works. If the device is powered- down before the completion of the erase cycle, then the contents of the Sector Protection Regis- ter cannot be guaranteed.

AT45DB321D-SU – 45DB321 32M Flash Memory Datasheet

After the last don’t care bit has been clocked in, the con- tent of the Security Register can be clocked out on the SO pins. These are similar to waveform 1 and waveform 2, except that output SO is not restricted to become valid during the t WL period. When a low- to-high transition occurs on the CS pin, the part will first transfer data from the page in main memory to a buffer and then program the data from the buffer back into same page of main memory. A page of data is first transferred from the main memory to buffer 1 or buffer 2, and then the same data from buffer 1 or buffer 2 is programmed back into its original page of main memory.

When the CS pin is deasserted, the device will be deselected and normally be placed in the standby mode not Deep Power-Down modeand the output pin SO will be in a high-impedance state. The algorithm will be repeated sequentially for each page within the entire array.


Unless otherwise specified tolerance: The regulator needs to supply this peak current requirement. The SI pin is used to shift data into the device. After the opcode is clocked in, the 1-byte status register will be clocked out on the output pin SOstarting with the next clock cycle. Take another look at dataasheet 44 of the manual section I have now run into another problem. For the AT45DB D, the four bits are 1 The decimal value of these four binary bits does at45dbb321d-su equate to the device density; the four bits represent a combinational code relating to differing densities of DataFlash datashete.

Excessive noise or ringing on these pins can be misinterpreted as multiple edges and cause improper operation of the device. The SI pin is used for at45db321d-u data input including command and address sequences. Ive managed to get rid of a fair few errors, but the ones about union’s I cannot get rid of. If bit 0 is a 0, then the page size is set to bytes. For at45db321c-su, if the sectors were not previously protected by the Enable Sector Protec- tion command, then simply asserting the WP pin would enable the sector protection within the maximum specified t WPE time.

The status of whether or not sector protection has been enabled or disabled by either the software or the hardware controlled methods can be deter- mined by checking the Status Register.

The only thing I can think of is the difference between instruction sets from PIC24 to PIC32, but even then shouldnt it just daatsheet something along the lines of this instruction just isnt right for this device rather than the undeclared comments? Removed “not recommended for new designs” comment from 8MW at45d321d-su drawing. After the last address byte has been clocked into the device, data can then be clocked in on subsequent clock cycles.

Atmel does not make any commitment to update the information contained herein.